找回密码
 立即注册
搜索
热搜: 活动 交友 discuz
查看: 1321|回复: 2

High-k Gate Dielectric Materials

[复制链接]

9

主题

0

回帖

43

积分

实习生

积分
43
发表于 2023-7-23 10:47:07 | 显示全部楼层 |阅读模式

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components.
This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and  applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.
The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling.
This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Table of Contents
1. Moore’s Law: In 21st Century  2. SiO2 Based MOS Devices: Leakage and Limitations  3. High-κ Dielectric Materials: Structural Properties and Selection  4. Selection of High-κ Dielectric Materials  5. Tunneling Current Density and Tunnel Resistivity: Application to High-κ Material HfO2  6. Analysis of Interface Charge Density: Application to High-κ Material Tantalum Pentoxide  7. High-κ Material Processing in CMOS VLSI Technology  8. Tunnel FET: Working, Structure, and Modeling  9. Heusler Compound: A Novel Material for Optoelectronic, Thermoelectric, and Spintronic Applications

本帖子中包含更多资源

您需要 登录 才可以下载或查看,没有账号?立即注册

×
EDA1024论坛免责声明
请勿上传侵权资料及软件! 如果发现资料侵权请及时联系,联系邮件: fenxin@fenchip.com QQ: 2322712906. 我们将在最短时间内删除。

36

主题

464

回帖

1314

积分

工程师助理

积分
1314
发表于 2023-12-30 21:20:02 | 显示全部楼层
谢谢分享

36

主题

464

回帖

1314

积分

工程师助理

积分
1314
发表于 2023-12-30 21:20:57 | 显示全部楼层
谢谢分享
您需要登录后才可以回帖 登录 | 立即注册

本版积分规则

QQ|Archiver|手机版|小黑屋|EDA1024技术论坛

GMT+8, 2024-12-19 09:13 , Processed in 0.042795 second(s), 20 queries .

Powered by Discuz! X3.5

© 2001-2024 Discuz! Team.

快速回复 返回顶部 返回列表